飞思卡尔半导体为包括无线基础设施、广播、工业、科技与医用(ISM)以及航空在内的射频功率放大器市场提供广泛支持。射频功率产品有助于客户满足不断增长的需求，采用先进的技术开发解决方案，不断提高性能并降低成本。

产品

射频功率器件参数搜索 

射频功率产品

• RF工业、科技与医用功率晶体管
  • HF/VHF -- To 600 MHz
    • MRF6V2010N: 10-450 MHz, 10 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF6V2150N: 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs 
    • MRF6V2300N: 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs 
    • MRF6V4300N: 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs 
    • MRF6VP11KH: 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF6VP21KH: 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF6VP2600H: 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF6VP41KH: 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6VP5600H: 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6VP61K25H: 1.8-600 MHz, 1250 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6VP6300H: 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier 
  • ISM波段—2.45 GHz
    • MRF6P24190HR6: 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET 
    • MRF6S24140H: 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs 
    • MW6IC2420NBR1: 2450 MHz, 20 W, 28 V CW RF LDMOS Integrated Power Amplifier 
    • MW7IC2425N: 2450 MHz, 25 W CW, 28 V Lateral N-Channel RF Power MOSFETs 
• RF LDMOS功率晶体管
  • 移动通信—520 MHz
    • MRF1511NT1: 175 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1513NT1: 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1517NT1: 520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1518NT1: 520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1535N: 520 MHz, 35 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF1550N: 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF1570N: 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
  • TV广播—1000 MHz
    • MRF373ALR1: 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF373ALSR1: 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF377H: 470-860 MHz, 45 W Avg., 32 V Lateral N-Channel RF Power MOSFET 
    • MRF6V3090N: 470-860 MHz, 90 W, 50 V Lateral N-Channel Singled-Ended Broadband RF Power MOSFETs 
    • MRF6VP3450H: 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6P3300H: 860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFET 
    • MRFE6S9045NR1: 880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9060NR1: 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier 
  • 蜂窝通信—500 MHz
    • MRF5S4125N: 450-480 MHz, 25 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier 
  • 蜂窝通信 -- 1000 MHz
    • MD8IC970N: 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MRF5S9070NR1: 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRF5S9080N: 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF5S9100N: 880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF5S9101N: 869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF5S9150H: 880 MHz, 33 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P9040N: 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8P9300H: 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S7120N: 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S7170N: 728-768 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S8260H: 850-895 MHz, 70 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S9100H: 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8S9120N: 865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9170N: 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9200N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9202N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9220H: 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S9260H: 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF9030L: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9030N: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9045L: 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9045N: 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9060L: 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9060N: 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9085L: 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs 
    • MRF9135L: 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs 
    • MRFE6P9220H: 865-900 MHz, 47 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFET 
    • MRFE6S8046N: 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9045NR1: 880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9046N: 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9060NR1: 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9125N: 800 MHz, 27 W Avg., 28 V, Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9130H: 880 MHz, 27 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9135H: 940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9160H: 880 MHz, 35 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9200H: 880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9201H: 880 MHz, 40 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9205H: 880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MW5IC970N: 800-900 MHz, 70 W, 28 V RF LDMOS Wideband 2-Stage Power Amplifiers 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier 
  • 蜂窝通信 -- 1500 MHz
    • MRF7S15100H: 1510 MHz, 23 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
  • L波段 -- 960-2000 MHz
    • MMG3014NT1: 40-4000 MHz, 19.5 dB, 25 dBm InGaP HBT 
    • MMG3H21NT1: 0-6000 MHz, 19.3 dB, 20.5 dBm InGaP HBT 
    • MRF6V10010N: 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET 
    • MRF6V10250HS: 1090 MHz, 250 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET 
    • MRF6V12250H: 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 
    • MRF6V12500H: 960-1215 MHz, 500 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 
    • MRF6V14300H: 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 
    • MRF6VP121KH: 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF7S15100H: 1510 MHz, 23 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S16150H: 1600-1660 MHz, 32 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9045NR1: 880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9060NR1: 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
  • S波段 -- 3100 - 3500 MHz
    • MRF7S35015HSR3: 3100-3500 MHz, 15 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET 
    • MRF7S35120HSR3: 3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET 
    • MRF8P29300H: 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs 
  • 通用LDMOS驱动器—2100 MHz
    • MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier 
  • PCS与3G—2200 MHz
    • MD7P19130H: 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF18060AL: 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs 
    • MRF18085AL: 1805-1880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF18090AR3: 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET 
    • MRF19090: 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs 
    • MRF21010L: 2110-2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF21030LR3: 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MRF21045L: 2110-2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs 
    • MRF281ZR1: 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF282ZR1: 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF5P21045NR1: 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA, Dual Path Lateral N-Channel RF Power MOSFET 
    • MRF5P21180HR6: 2110-2170 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF5S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF5S19100H: 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF5S19130H: 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF5S19150H: 1930-1990 MHz, 32 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF5S21045N: 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF5S21130H: 2110-2170 MHz, 28 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs 
    • MRF6P18190HR6: 1805-1880 MHz, 44 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF6P21190HR6: 2110-2170 MHz, 44 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFET 
    • MRF6S18060N: 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF6S18100N: 1805-1990 MHz, 100 W, 28 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF6S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19100H: 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19100N: 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19120H: 1930-1990 MHz, 19 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19140H: 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19200H: 1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S21050L: 2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs 
    • MRF6S21060N: 2110-2170 MHz, 14 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S21100H: 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S21100N: 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S21140H: 2110-2170 MHz, 30 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs 
    • MRF6S21190H: 2110-2170 MHz, 54 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7P20040H: 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S18125AH: 1805-1880 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF7S18125BH: 1930-1990 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF7S18170H: 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19080H: 1930-1990 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19100N: 1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19120NR1: 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF7S19170H: 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19210H: 1930-1990 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21080H: 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21110H: 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21150H: 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21170H: 2110-2170 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21210H: 2110-2170 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P18265H: 1805-1880 MHz, 72 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20100H: 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20160H: 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20161H: 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8P23080H: 2300-2400 MHz, 16 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8P26080H: 2500-2700 MHz, 14 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S18120H: 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8S18260H: 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S19140H: 1930-1990 MHz, 34 W Avg., 28 V Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S19260H: 1930-1990 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S21100H: 2110-2170 MHz, 24 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21120H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21140H: 2110-2170 MHz, 34 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21172H: 2110-2170 MHz, 42 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21200H: 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S26120H: 2620-2690 MHz, 28 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
• RF GaAs功率晶体管
  • 线性晶体管—6000 MHz
    • MRFG35002N6AT1: 3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT 
    • MRFG35003ANT1: 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT 
    • MRFG35003N6AT1: 3.5 GHz, 3 W , 6 V Power FET GaAs PHEMT 
    • MRFG35005ANT1: 3.5 GHz, 4.5 W , 12 V Power FET GaAs PHEMT 
    • MRFG35010ANT1: 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT 
    • MRFG35010AR1: 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT 
    • MRFG35020AR1: 3.5 GHz, 20 W, 12 V WiMAX Power FET GaAs PHEMT 
• RF WiMAX，WiBro，BWA功率晶体管
  • 1600 - 1700 MHz
    • MRF7S16150H: 1600-1660 MHz, 32 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs 
  • 2300 - 2400 MHz
    • MRF6P23190HR6: 2300-2400 MHz, 40 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF6S23100H: 2300-2400 MHz, 20 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S23140H: 2300-2400 MHz, 28 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27015N: 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S23120H: 2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFETs 
  • 2600 - 2700 MHz
    • MD7IC2755N: 2500-2700 MHz, 10 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
    • MRF6P27160HR6: 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF6S27015N: 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27050H: 2500-2700 MHz, 7 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27085H: 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S27130H: 2500-2700 MHz, 23 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF8S26060H: 2620-2690 MHz, 15.5 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MW7IC2725N: 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2750N: 2500-2700 MHz, 8 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
  • 3400 - 3800 MHz
    • MRF7S38010H: 3400-3600 MHz, 2 W Avg., 30 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S38040H: 3400-3600 MHz, 8 W Avg., 30 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S38075H: 3400-3600 MHz, 12 W Avg., 30 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MW7IC3825N: 3400-3600 MHz, 5 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
  • DC - 6000 MHz
    • MRFG35002N6AT1: 3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT 
    • MRFG35003ANT1: 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT 
    • MRFG35003N6AT1: 3.5 GHz, 3 W , 6 V Power FET GaAs PHEMT 
    • MRFG35005ANT1: 3.5 GHz, 4.5 W , 12 V Power FET GaAs PHEMT 
    • MRFG35010ANT1: 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT 
    • MRFG35010AR1: 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT 
    • MRFG35020AR1: 3.5 GHz, 20 W, 12 V WiMAX Power FET GaAs PHEMT 
• RF放大器IC
  • 基站IC驱动器
    • MD7IC18120N: 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7IC2050N: 1880-2100 MHz, 10 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7IC21100N: 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7IC2250N: 2110-2170 MHz, 5.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MDE6IC7120N: 728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MDE6IC9120N: 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MHV5IC1810NR2: 1805-1990 MHz, 5 W Avg., 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier 
    • MHV5IC2215NR2: 2170 MHz, 23 dBm, 28 V Single N-CDMA, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier 
    • MHVIC2114NR2: 2100 MHz, 27 V, 23 dBm Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier 
    • MHVIC910HNR2: 960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit 
    • MHVIC915NR2: 746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE , RF LDMOS Wideband Integrated Power Amplifier 
    • MW4IC2020N: 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW4IC2230N: 2110-2170 MHz, 30 W, 28 V, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW4IC915N: 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW5IC2030N: 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE, W-CDMA, PHS RF LDMOS Wideband Integrated Power Amplifiers 
    • MW6IC1940N: 1920-2000 MHz, 40 W, 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW6IC2015N: 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW6IC2240N: 2110-2170 MHz, 4.5 W Avg., 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC18100N: 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2040N: 1930-1990 MHz, 1805-1880 MHz, 4 W Avg., 28 V, Single W-CDMA, GSM EDGE, GSM RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2220N: 2110-2170 MHz, 2 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2240N: 2110-2170 MHz, 4 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC3825N: 3400-3600 MHz, 5 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC915N: 728-960 MHz, 1.6 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier 
    • MW7IC930N: 728-768 MHz, 920-960 MHz, 3.2 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MWE6IC9080N: 865-960 MHz, 80 W CW, 28 V GSM, GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
    • MWE6IC9100N: 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
    • MWIC930N: 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
• 宽带RF功率晶体管
  • 135-520 MHz
    • MRF1511NT1: 175 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1513NT1: 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1518NT1: 520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1535N: 520 MHz, 35 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF1550N: 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF1570N: 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
  • 450-3000 MHz
    • MHVIC915NR2: 746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE , RF LDMOS Wideband Integrated Power Amplifier 
    • MRF5S9070NR1: 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRF6VP3450H: 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6P3300H: 860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFET 
    • MRFE6S9045NR1: 880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9060NR1: 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MW4IC915N: 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
  • 1000-3800 MHz
    • MHV5IC2215NR2: 2170 MHz, 23 dBm, 28 V Single N-CDMA, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier 
    • MRF6P27160HR6: 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S23100H: 2300-2400 MHz, 20 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27015N: 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27050H: 2500-2700 MHz, 7 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27085H: 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MW5IC2030N: 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE, W-CDMA, PHS RF LDMOS Wideband Integrated Power Amplifiers 
    • MW6IC2240N: 2110-2170 MHz, 4.5 W Avg., 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2725N: 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2750N: 2500-2700 MHz, 8 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC3825N: 3400-3600 MHz, 5 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
  • DC-6000 MHz
    • MRFG35002N6AT1: 3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT 
    • MRFG35003ANT1: 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT 
    • MRFG35003N6AT1: 3.5 GHz, 3 W , 6 V Power FET GaAs PHEMT 
    • MRFG35005ANT1: 3.5 GHz, 4.5 W , 12 V Power FET GaAs PHEMT 
    • MRFG35010ANT1: 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT 
    • MRFG35010AR1: 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT 
    • MRFG35020AR1: 3.5 GHz, 20 W, 12 V WiMAX Power FET GaAs PHEMT 

RF功率产品应用分类

• 广播
• RF商用航天航空
• 工业